Semiconductor device, a method of manufacturing the same and an electronic device

ABSTRACT

A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

CROSS-REFERENCES

This is a continuation application of U.S. Ser. No. 12/155,479, filedJun. 5, 2008, which is a continuation application of U.S. Ser. No.11/131,367, filed May 18, 2005 (now abandoned), which is a divisionalapplication of U.S. Ser. No. 10/755,375, filed Jan. 13, 2004 (now U.S.Pat. No. 6,992,385).

BACKGROUND OF THE INVENTION

The present invention relates to a packaging technique for asemiconductor device.

As one of semiconductor devices there is known a power transistor usedas a switching element in, for example, a power amplifier circuit or apower supply circuit. As to the power transistor, there have beenproposed various structures, which have been produced on a commercialbasis. For example, in Japanese Published Unexamined Patent ApplicationNo. 2000-223634 (Patent Literature 1) there is disclosed asurface-mounted type power transistor. In the same publication (FIG. 17and paragraphs [0058] and [0059] in the specification) there also isdisclosed a technique wherein a portion of lead terminals bonded toelectrodes on a main surface of a semiconductor chip are exposed from anupper surface of a resin housing to decrease the heat resistance of asemiconductor package.

[Patent Literature 1]

Japanese Published Unexamined Patent Application No. 2000-223634

SUMMARY OF THE INVENTION

In the power transistor, since the amount of an electric current handledtherein is large, it is desired to provide a package structure which issuperior in heat dissipating property for releasing heat from asemiconductor chip to the exterior and which is low in cost and high inreliability.

In order to obtain a package structure low in cost and high inreliability, it is effective to seal a semiconductor chip with resin. Inthis case, however, the heat dissipating property is deterioratedbecause the resin is low in thermal conductivity.

In a package wherein a semiconductor chip is sealed with resin, it iseffective to adopt such a both upper-/lower-surface heat dissipatingstructure as is disclosed in the foregoing Patent Literature 1 wherein aportion of lead terminals connected to electrodes on a main surface of asemiconductor chip are exposed from an upper surface of a resin housing,and die terminals connected to electrodes on a back side opposite to themain surface of the semiconductor chip are exposed from a lower surfaceopposite to the upper surface of the resin housing.

In the both upper-/lower-surface heat dissipating structure disclosed inthe Patent Literature 1, however, since die terminals are not exposedfrom side faces of the resin housing, it is difficult to form solderfillet which is necessary for improving the connection reliability insoldering at the time of packaging. It is also difficult to judgewhether soldering is good or bad by visual inspection.

Besides, since the lead terminals do not have any portion positioned inthe interior of the resin housing and the entire upper surface of eachlead terminal is exposed from the resin housing, the lead terminals areapt to come off from the resin housing, thus resulting in deteriorationof reliability.

It is an object of the present invention to provide a novelsemiconductor device high in heat dissipating property and also high inconnection reliability in packaging.

It is another object of the present invention to provide a novelsemiconductor device high in heat dissipating property and able to judgewhether soldering is good or bad by visual inspection at the time ofpackaging.

It is a further object of the present invention to provide a novelsemiconductor device high in both heat dissipating property andreliability.

It is still further object of the present invention to provide a novelsemiconductor device high in heat dissipating property.

It is a still further object of the present invention to provide anelectronic device high in heat dissipating property.

The above and other objects and novel features of the present inventionwill become apparent from the following description and the accompanyingdrawings.

Typical modes of the present invention as disclosed herein will beoutlined below.

-   (1) A semiconductor device comprises:

a semiconductor chip having first and second main surfaces positioned onmutually opposite sides, a first electrode formed over the first mainsurface, and a second electrode formed over the second main surface;

a resin sealing member sealing the semiconductor chip, and having firstand second main surfaces positioned on mutually opposite sides, thefirst main surface being positioned on the first main surface side ofthe semiconductor chip, and the second main surface being positioned onthe second main surface side of the semiconductor chip;

a first conductive member, in which one end side is positioned over thefirst electrode of the semiconductor chip and connected to the firstelectrode of the semiconductor chip through a connecting means, and theother end side opposite to the one end side is positioned on the secondmain surface side of the resin sealing member relative to the one endside and exposed from the resin sealing member; and

a second conductive member connected to the second electrode of thesemiconductor chip through a second connecting means,

wherein the one end side of the first conductive member is exposed fromthe first main surface of the resin sealing member, and the secondconductive member is exposed from the second main surface and side facesof the resin sealing member.

-   (2) In the semiconductor device of the above (1), the other end side    of the first conductive member is positioned on a first side-face    side of the resin sealing member, and the second conductive member    is exposed from a second side face opposite to the first side face    of the resin sealing member.-   (3) In the semiconductor device of the above (1), the first    electrode of the semiconductor chip is a source electrode and the    second electrode of the semiconductor chip is a drain electrode, or    the first electrode of the semiconductor chip is a drain electrode    and the second electrode of the semiconductor chip is a source    electrode.-   (4) A semiconductor device comprises:

a semiconductor chip having first and second main surfaces positioned onmutually opposite sides, a first electrode formed over the first mainsurface, and a second electrode formed over the second main surface;

a resin sealing member sealing the semiconductor chip and having firstand second main surfaces positioned on mutually opposite sides, thefirst main surface being positioned on the first main surface side ofthe semiconductor chip, and the second main surface being positioned onthe second main surface side of the semiconductor chip;

a first conductive member having a first portion, a second portion, anda third portion, the first portion being positioned over the firstelectrode of the semiconductor chip, connected to the first electrode ofthe semiconductor chip through a first connecting means and exposed fromthe first main surface of the resin sealing member, the second portionbeing formed integrally with the first portion and positioned in theinterior of the resin sealing member, and the third portion being formedintegrally with the second portion and exposed from the second mainsurface of the resin sealing member; and

a second conductive member connected to the second electrode of thesemiconductor chip through a second connecting means and exposed fromthe second main surface of the resin sealing member.

-   (5) In the semiconductor device of the above (4), the third portion    of the first conductive member is exposed from a first side face of    the resin sealing member, and the second conductive member is    exposed from a second side face opposite to the first side face of    the resin sealing member.-   (6) In the semiconductor device of the above (4), the first    electrode of the semiconductor chip is a drain electrode and the    second electrode of the semiconductor chip is a source electrode.-   (7) A semiconductor comprises:

a semiconductor chip, the semiconductor chip having first and secondmain surfaces positioned on mutually opposite sides, first and secondelectrodes formed over the first main surface, and a third electrodeformed over the second main surface;

a resin sealing member sealing the semiconductor chip and having firstand second main surfaces positioned on mutually opposite sides, thefirst main surface being positioned on the first main surface side ofthe semiconductor chip, and the second main surface being positioned onthe second main surface side of the semiconductor chip;

a first conductive member having a first portion, a second portion, anda third portion, the first portion being connected to the firstelectrode of the semiconductor chip through a first connecting means,the second portion being formed integrally with the first portion, andthe third portion being formed integrally with the second portion andpositioned on the second main surface side of the resin sealing memberrelative to the first portion;

a second conductive member having a first portion, a second portion, anda third portion, the first portion being connected to the secondelectrode of the semiconductor chip through a second connecting means,the second portion being formed integrally with the first portion, andthe third portion being formed integrally with the second portion andpositioned on the second main surface side of the resin sealing memberrelative to the first portion; and

a third conductive member connected to the third electrode of thesemiconductor chip through a third connecting means and exposed from thesecond main surface of the resin sealing member,

wherein the first portion of the first conductive member is exposed fromthe first main surface of the resin sealing member, and the firstportion of the second conductive member is positioned in the interior ofthe resin sealing member.

-   (8) In the semiconductor device of the above (7), the first portion    of the second conductive member is smaller in thickness than the    first portion of the first conductive member of the first conductive    member.-   (9) In the semiconductor device of the above (7), the second    portions of the first and second conductive members are positioned    in the interior of the resin sealing member, and the third portions    of the first and second conductive members are exposed from the    second main surface of the resin sealing member.-   (10) In the semiconductor device of the above (7), the third    portions of the first and second conductive members are exposed from    a first side face of the resin sealing member, and the third    conductive member is exposed from a second side face opposed to the    first side face of the resin sealing member.-   (11) In the semiconductor device of the above (7), the first    electrode of the semiconductor chip is a source electrode, the    second electrode of the semiconductor chip is a gate electrode, and    the third electrode of the semiconductor chip is a drain electrode.    Alternatively, the first electrode of the semiconductor chip is a    drain electrode, the second electrode of the semiconductor chip is a    gate electrode, and the third electrode of the semiconductor chip is    a source electrode.-   (12) A semiconductor device comprises:

a semiconductor chip having first and second main surfaces positioned onmutually opposite sides, first and second electrodes formed over thefirst main surface, and a third electrode formed over the second mainsurface;

a resin sealing member sealing the semiconductor chip and having firstand second main surfaces positioned on mutually opposite sides, thefirst main surface being positioned on the first main surface side ofthe semiconductor chip, and the second main surface being positioned onthe second main surface side of the semiconductor chip;

a first conductive member having a first portion, a second portion, anda third portion, the first portion being connected to the firstelectrode of the semiconductor chip through a first connecting means,the second portion being formed integrally with the first portion, andthe third portion being positioned on the second main surface side ofthe resin sealing member relative to the first portion;

a second conductive member positioned outside the semiconductor chip andon the second main surface side of the resin sealing member relative tothe first portion of the first conductive member; and

a third conductive member connected to the third electrode of thesemiconductor chip through a second connecting means and exposed fromthe second main surface of the resin sealing member,

wherein the first portion of the first conductive member is exposed fromthe first main surface of the resin sealing member, and the secondconductive member is connected electrically to the second electrode ofthe semiconductor chip through a bonding wire.

-   (13) In the semiconductor device of the above (12), the second    portion of the first conductive member is positioned in the interior    of the resin sealing member, and the third portion of the first    conductive member and the second conductive member are exposed from    the second main surface of the resin sealing member.-   (14) A semiconductor device comprises:

a semiconductor chip having first and second main surfaces positioned onmutually opposite sides, a first electrode formed over the first mainsurface, and a second electrode formed over the second main surface;

a resin sealing member sealing the semiconductor chip, and having firstand second main surfaces positioned on mutually opposite sides, thefirst main surface being positioned on the first main surface side ofthe semiconductor chip, and the second main surface being positioned onthe second main surface side of the semiconductor chip;

a first conductive member having a first portion, a second portion, anda third portion, the first portion being connected to the firstelectrode of the semiconductor chip through a first connecting means,the second portion being formed integrally with the first portion, andthe third portion being formed integrally with the second portion andpositioned on the second main surface side of the resin sealing memberrelative to the first portion; and

a second conductive member having a first portion connected to thesecond electrode of the semiconductor chip through a second connectingmeans and a second portion formed integrally with the first portion andlarger in thickness than the first portion,

wherein the first portion of the second conductive member is exposedfrom the second main surface of the resin sealing member, and the secondportion of the second conductive member is exposed from the first andsecond main surfaces of the resin sealing member.

-   (15) In the semiconductor device of the above (14), the second    portion of the second conductive member is exposed from side faces    of the resin sealing member.-   (16) In the semiconductor device of the above (14), the first    electrode of the semiconductor chip is a source electrode and the    second electrode of the semiconductor chip is a drain electrode.    Alternatively, the first electrode of the semiconductor chip is a    drain electrode and the second electrode of the semiconductor chip    is a source electrode.-   (17) A semiconductor device comprises:

a semiconductor chip having first and second main surfaces positioned onmutually opposite sides, a first electrode formed over the first mainsurface, and a second electrode formed over the second main surface;

a resin sealing member sealing the semiconductor chip and having firstand second main surfaces positioned on mutually opposite sides, thefirst main surface being positioned on the first main surface side ofthe semiconductor chip, and the second main surface being positioned onthe second main surface side of the semiconductor chip;

a first conductive member having a first portion connected to the firstelectrode of the semiconductor chip through a first connecting means anda second portion formed integrally with the first portion and smaller inthickness than the first portion; and

a second conductive member having a first portion connected to thesecond electrode of the semiconductor chip through a second connectingmeans and a second portion formed integrally with the first portion andlarger in thickness than the first portion,

wherein the first and second portions of the first conductive member areexposed from the first main surface of the resin sealing member, thesecond portion of the first conductive member is exposed from the secondmain surface of the resin sealing member, the first portion of thesecond conductive member is positioned in the interior of the resinsealing member, and the second portion of the second conductive memberis exposed from the second main surface of the resin sealing member.

-   (18) In the semiconductor device of the above (17), the second    portion of the first conductive member is exposed from side faces of    the resin sealing member.-   (19) In the semiconductor device of the above (17), the first    electrode of the semiconductor chip is a drain electrode and the    second electrode of the semiconductor chip is a source electrode.    Alternatively, the first electrode of the semiconductor chip is a    source electrode and the second electrode of the semiconductor chip    is a drain electrode.-   (20) An electronic device comprises a wiring substrate, a    semiconductor device mounted over the wiring substrate, and a heat    dissipating member disposed over the semiconductor device,

the semiconductor device comprising:

a semiconductor chip having first and second main surfaces positioned onmutually opposite sides, first and second electrodes formed over thefirst main surface, and a third electrode formed over the second mainsurface;

a resin sealing member sealing the semiconductor chip and having firstand second main surfaces positioned on mutually opposite sides, thefirst main surface being positioned on the first main surface side ofthe semiconductor chip, and the second main surface being positioned onthe second main surface side of the semiconductor chip;

a first conductive member having a first portion, a second portion, anda third portion, the first portion being connected to the firstelectrode of the semiconductor chip through the first connecting meansand exposed from the first main surface of the resin sealing member, thesecond portion being formed integrally with the first portion, and thethird portion being formed integrally with the second portion andexposed from the second main surface of the resin sealing member;

a second conductive member having a first portion, a second portion, anda third portion, the first portion being connected to the secondelectrode of the semiconductor chip through a second connecting meansand positioned in the interior of the resin sealing member, the secondportion being formed integrally with the first portion, and the thirdportion being exposed from the second main surface of the resin sealingmember; and

a third conductive member connected to the third electrode of thesemiconductor chip through a third connecting means and exposed from thesecond main surface of the resin sealing member,

wherein the third portions of the first and second conductive members,as well as the third conductive member, are soldered to electrodesformed over the wiring substrate, and the first portion of the firstconductive member is connected to the heat dissipating member through aheat conducting member.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view (top view) showing an appearance of a powertransistor according to a first embodiment of the present invention;

FIG. 2 is a bottom view (underside view) showing an appearance of thepower transistor (semiconductor device) of the first embodiment;

FIG. 3 is a plan view showing an internal structure of the powertransistor of the first embodiment;

FIG. 4 is an enlarged sectional view taken along line a-a in FIG. 3;

FIG. 5 is an enlarged sectional view taken along line b-b in FIG. 3;

FIGS. 6( a) and 6(b) illustrate a schematic construction of a regulator(electronic device) with the power transistor incorporated therein, inwhich FIG. 6( a) is a plan view and FIG. 6( b) is a sectional view takenalong line a-a in FIG. 6( a);

FIG. 7 is a partially enlarged sectional view of FIG. 6( b);

FIG. 8 is an enlarged sectional view taken along line b-b in FIG. 6( a);

FIG. 9 is an equivalent circuit diagram showing a schematic constructionof the regulator of FIG. 6;

FIG. 10 is a plan view showing a part of a lead frame used inmanufacturing the power transistor of the first embodiment;

FIGS. 11( a) and 11(b) are partially enlarged views of the lead frame ofFIG. 10, in which FIG. 11( a) is a plan view and FIG. 11( b) is asectional view taken along line a-a in FIG. 11( a);

FIG. 12 is a plan view of a header used in manufacturing the powertransistor of the first embodiment;

FIG. 13 is a sectional view of a semiconductor chip used inmanufacturing the power transistor of the first embodiment;

FIG. 14 is a bottom view (underside view) of the semiconductor chipshown in FIG. 13;

FIG. 15 is a plan view of a semiconductor wafer used in manufacturingthe power transistor of the first embodiment;

FIGS. 16( a) to 16(d) illustrate dicing steps for dicing thesemiconductor wafer into individual semiconductor chips in manufacturingthe power transistor of the first embodiment, in which FIGS. 16( a) to16(d) are sectional views;

FIGS. 17( a) and 17(b) illustrate a manufacturing step in manufacturingthe power transistor of the first embodiment, in which FIG. 17( a) is aplan view and FIG. 17( b) is a sectional view taken along line a-a inFIG. 17( a);

FIGS. 18( a) and 18(b) illustrate a manufacturing step in manufacturingthe power transistor of the first embodiment, in which FIG. 18( a) is aplan view and FIG. 18( b) is a sectional view taken along line a-a inFIG. 18( a);

FIG. 19 is a partially enlarged sectional view of FIG. 18( b);

FIG. 20 is a plan view illustrating a manufacturing step inmanufacturing the power transistor of the first embodiment;

FIGS. 21( a) and 21(b) illustrate a manufacturing step in manufacturingthe power transistor of the first embodiment, in which FIG. 21( a) is asectional view taken at a position corresponding to line a-a in FIG. 20and FIG. 21( b) is a sectional view taken at a position corresponding toline b-b in FIG. 20;

FIGS. 22( a) and 22(b) illustrate a manufacturing step in manufacturingthe power transistor of the first embodiment, in which FIG. 22( a) is asectional view taken at a position corresponding to line a-a in FIG. 20and FIG. 22( b) is a sectional view taken at a position corresponding toline b-b in FIG. 20;

FIG. 23 is a plan view illustrating a manufacturing step inmanufacturing the power transistor of the first embodiment;

FIGS. 24( a) and 24(b) illustrate a manufacturing step in manufacturingthe power transistor of the first embodiment, in which FIG. 24( a) is aplan view and FIG. 24( b) is a sectional view taken along line a-a inFIG. 24( a);

FIG. 25 is a sectional view of a principal portion, showing a schematicconstruction of a regulator according to a first modification of thefirst embodiment;

FIGS. 26( a) and 26(b) illustrate an internal structure of a powertransistor according to a second modification of the first embodiment,in which FIG. 26( a) is a plan view and FIG. 26( b) is a sectional viewtaken along line a-a in FIG. 26( a);

FIGS. 27( a) and 27(b) illustrate an internal structure of a powertransistor according to a third modification of the first embodiment, inwhich FIG. 27( a) is a plan view and FIG. 27( b) is a sectional viewtaken along a-a in FIG. 27( a);

FIGS. 28( a) and 28(b) illustrate an internal structure of a powertransistor according to a fourth modification of the first embodiment,in which FIG. 28( a) is a plan view and FIG. 28( b) is a sectional viewtaken along line a-a in FIG. 28( a);

FIGS. 29( a) and 29(b) illustrates an internal structure of a powertransistor according to a fifth modification of the first embodiment, inwhich FIG. 29( a) is a plan view and FIG. 29( b) is a sectional viewtaken along line a-a in FIG. 29( a);

FIG. 30 is a plan view illustrating an internal structure of a powertransistor according to a sixth modification of the first embodiment;

FIG. 31 is a sectional view illustrating an internal structure of apower transistor according to a seventh modification of the firstembodiment;

FIGS. 32( a) and 32(b) illustrate appearance of a power transistoraccording to a second embodiment of the present invention, in which FIG.32( a) is a plan view (top view) and FIG. 32( b) is a bottom view(underside view);

FIG. 33 is a sectional view taken along line a-a in FIG. 32( a);

FIG. 34 is a plan view (top view) showing an appearance of a powertransistor according to a third embodiment of the present invention;

FIG. 35 is a bottom view (underside view) showing an appearance of thepower transistor of the third embodiment;

FIG. 36 is an enlarged sectional view taken along line a-a in FIG. 35;

FIG. 37 is an enlarged sectional view taken along line b-b in FIG. 35;

FIG. 38 is a plan view (top view) showing an appearance of a powertransistor according to a fourth embodiment of the present invention;

FIG. 39 is a bottom view (underside view) showing an appearance of thepower transistor of the fourth embodiment;

FIG. 40 is a plan view showing an internal structure of the powertransistor of the fourth embodiment;

FIG. 41 is an enlarged sectional view taken along line a-a in FIG. 40:

FIG. 42 is an enlarged sectional view taken along line b-b in FIG. 40;

FIG. 43 is a plan view showing an internal structure of a powertransistor according to a fifth embodiment of the present invention;

FIGS. 44( a) and 44(b) illustrate an internal structure of the powertransistor of the fifth embodiment, in which FIG. 44( a) is a sectionalview taken along line a-a in FIG. 43 and FIG. 44( b) is a sectional viewtaken along line b-b in FIG. 43;

FIG. 45 is a plan view showing an appearance of a power transistoraccording to a sixth embodiment of the present invention;

FIG. 46 is a bottom view showing an appearance of the power transistorof the sixth embodiment; and

FIGS. 47( a) and 47(b) illustrates an internal structure of the powertransistor of the sixth embodiment, in which FIG. 47( a) is a sectionalview taken along line a-a in FIG. 45 and FIG. 47( b) is a sectional viewtaken along line b-b in FIG. 45.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Embodiments of the present invention will be described in detailhereinunder with reference to the accompanying drawings. In all of thedrawings for illustrating the embodiments, components having the samefunctions are identified by the same reference numerals in principle,and repeated explanations thereof will be omitted. Further, for makingthe drawings easier to see, hatchings which represent sections arepartially omitted.

First Embodiment

FIG. 1 is a plan view (top view) showing an appearance of a powertransistor according to a first embodiment of the present invention,FIG. 2 is a bottom view (underside view) showing an appearance of thepower transistor (semiconductor device) of the first embodiment, FIG. 3is a plan view showing an internal structure of the power transistor ofthe first embodiment, FIG. 4 is an enlarged sectional view taken alongline a-a in FIG. 3, and FIG. 5 is an enlarged sectional view taken alongline b-b in FIG. 3.

As shown in FIGS. 1 to 5, a power transistor 1A according to this firstembodiment comprises a semiconductor chip 2, a resin sealing member 11for sealing the semiconductor chip 2, leads (6, 8) as conductivemembers, and a header 7.

As shown in FIGS. 3 to 5, the semiconductor chip 2 is quadrangular in aplanar shape thereof perpendicular to its thickness direction. Further,the semiconductor chip 2 has a main surface 2 x and a back surface 2 ywhich are positioned on mutually opposite sides in the thicknessdirection of the semiconductor chip. On the main surface 2 x are formeda source electrode 3 and a gate electrode 5, while on the back surface 2y is formed a drain electrode 4.

The semiconductor chip 2 is composed principally of a semiconductorsubstrate formed of a single crystal silicon for example. On the mainsurface of the semiconductor substrate there is formed a MISFET (MetalInsulator Semiconductor Field Effect Transistor) of a vertical structurefor example. In the vertical MISFET, a plurality of fine transistorcells are connected in parallel in order to obtain a large electricpower.

The semiconductor chip 2 is sealed with a resin sealing member 11. Asshown in FIGS. 1, 2, and 4, the resin sealing member 11 is quadrangularin a planar shape thereof perpendicular to its thickness direction.Further, the resin sealing member has a main surface (upper surface) 11x and a back surface (lower surface, mounting surface) 11 y which arepositioned on mutually opposite sides in the thickness direction of thesemiconductor chip. The main surface 11 x is positioned on the mainsurface 2 x side of the semiconductor chip 2, while the back surface 11y is positioned on the back surface 2 y side of the semiconductor chip2.

For the purpose of reducing a stress, the resin sealing member 11 isformed using, for example, an epoxy-based thermosetting resin with aphenolic curing agent, silicone rubber and filler incorporated therein.The resin sealing member 11 is formed by a transfer molding method whichis suitable for mass production. According to the transfer moldingmethod, there is used a molding die provided with pot, runner, resinpouring gate, and cavity, and a thermosetting resin is injected from thepot into the cavity through the runner and the resin pouring gate toform a resin sealing member.

As shown in FIGS. 3 and 4, the lead 6 is formed by bending and has afirst portion 6 a, a second portion 6 b, and a third portion 6 c. A partof the first portion 6 a is positioned above the source electrode 3 ofthe semiconductor chip 2 and another part thereof projects to theoutside of the semiconductor chip 2 across a first side out of first andsecond sides of the main surface 2 x of the semiconductor chip 2 whichfirst and second sides are positioned on mutually opposite sides in afirst direction (X direction). The second portion 6 b is formedintegrally with the first portion 6 a and is bent from the first portion6 a toward the back surface 11 y of the resin sealing member 11. Thethird portion 6 c is formed integrally with the second portion 6 b andextends in the same direction (away from the semiconductor chip 2) asthe projecting direction of the first portion 6 a from the secondportion 6 b.

The first portion 6 a of the lead 6 is connected electrically andmechanically to the source electrode 3 of the semiconductor chip 2through, for example, a plurality of salient electrodes 9 as connectingmeans. The second portion 6 b of the lead 6 is an offset portion forspacing the first portion 6 a and the third portion 6 c from each other.The third portion 6 c of the lead 6 is positioned on the back surface 11y side of the resin sealing member 11 relative to the first portion 6 athrough the second portion 6 b.

As shown in FIGS. 1 and 4, the first portion 6 a of the lead 6 isexposed from the main surface 11 x of the resin sealing member 11. Asshown in FIGS. 2 and 3, the third portion 6 c of the lead 6 is exposedfrom the back surface 11 y of the resin sealing member 11 and is furtherexposed from a first side face 11 z out of first and second side faces11 z of the resin sealing member 11 which first and second side facesare positioned on mutually opposite sides in X direction. That is, oneend side of the lead 6 is positioned above the source electrode 3 of thesemiconductor chip 2, is connected to the source electrode 3 of thesemiconductor chip 2 through salient electrodes (connecting means) 9,and is exposed from the main surface 11 x of the resin sealing member11, while the other end side opposite to the one end side is positionedon the back surface side of the resin sealing member 11 relative to theone end side and is exposed from both back surface 11 y an first sideface 11 z of the resin sealing member.

Like the lead 6, the lead 8 is also formed by bending and has a firstportion 8 a, a second portion 8 b, and a third portion 8 c. A part ofthe first portion 8 a is positioned above the gate electrode 5 of thesemiconductor chip 2, while another part thereof, like that of the lead6, projects to the outside of the semiconductor chip 2 across the firstside of the main surface 2 x of the semiconductor chip. The secondportion 8 b is formed integrally with the first portion 8 a and is bentfrom the first portion 8 a toward the back surface 11 y of the resinsealing member 11. The third portion 8 c is formed integrally with thesecond portion 8 b and extends in the same direction (away from thesemiconductor chip 2) as the projecting direction of the first portion 8a from the second portion 8 b.

The first portion 8 a of the lead 8 is connected electrically andmechanically to the gate electrode 5 of the semiconductor chip 2through, for example, a salient electrode 9 as connecting means. Thesecond portion 8 b of the lead 8 is an offset portion for spacing thefirst portion 8 a and the third portion 8 c from each other in thethickness direction of the resin sealing member 11. The third portion 8c of the lead 8 is positioned on the back surface 11 y side of the resinsealing member 11 relative to the first portion 8 a through the secondportion 8 b.

As shown in FIGS. 1 and 5, the first portion 8 a of the lead 8 ispositioned in the interior of the resin sealing member 11. As shown inFIGS. 2 and 5, the third portion 8 c of the lead 8 is exposed from theback surface 11 y of the resin sealing member 11 and is further exposed,like the lead 6, from the first side face 11 z of the resin sealingmember 11. That is, one end side of the lead 8 is positioned above thesecond gate electrode 5 of the semiconductor chip 2, is connected to thegate electrode 5 of the semiconductor chip 2 through a salient electrode(connecting means) 9, and is positioned in the interior of the resinsealing member 11, while the other end side thereof opposite to the oneend side is positioned on the back surface side of the resin sealingmember 1 relative to the one end side and is exposed from the backsurface 11 y and the first side face 11 z of the resin sealing member11.

For example, as shown in FIGS. 3 and 4, plural salient electrodes 9 areinterposed between and fixed to the source electrode 3 of thesemiconductor chip 2 and the first portion 6 a of the lead 6.

For example, as shown in FIGS. 3 and 5, one salient electrode 9 isinterposed between and fixed to the gate electrode 5 of thesemiconductor chip 2 and the first portion 8 a of the lead 8.

As the salient electrode(s) there is used, for example, a stud bumpformed of gold (Au) though there is made no limitation thereto. Forexample, the stud bump is formed by forming a ball at the tip of Auwire, then thermocompression-bonding the ball to an electrode on thechip under ultrasonic oscillation, and subsequently cutting off the Auwire from the ball. In case of using a stud bump as the salientelectrode 9, the electrode-lead connection on the semiconductor chip isperformed by thermocompression bonding.

As shown in FIGS. 4 and 5, the header 7 is connected electrically andmechanically to the drain electrode 4 on the back side 2 y of thesemiconductor chip 2 through, for example, an electrically conductiveadhesive as connecting means. As shown in FIGS. 2, 4, and 5, the header7 is exposed from the back surface 11 y of the resin sealing member 11and, as shown in FIGS. 1, 2, 4, and 5, is further exposed from thesecond side face 11 z opposite to the first side face 11 z of the resinsealing member 11 from which the first portions (6 c, 8 c) of the leads(6, 8) are exposed. In this first embodiment, the header 7 projects fromthe second side face 11 z of the resin sealing member 11. The thirdportions (6 c, 8 c) of the leads (6, 8) also project from the first sideface 11 z of the resin sealing member 11.

In the header 7, as shown in FIGS. 2 and 5, there is formed a slit 12extending through an upper surface (chip-connected surface) of theheader and further through a lower surface thereof (exposed surface fromthe resin sealing member). The slit 12 is formed in the other portionthan the area where the semiconductor chip 2 is connected, and theinterior of the slit 12 is filled with the resin sealing member 11. Thatis, the slit 12 is provided for preventing dislodgment of the header 7from the resin sealing member 11.

As shown in FIGS. 1, 4, and 5, the second portions (6 b, 8 b) of theleads 6 and 8 are positioned in the interior of the resin sealing member11. The thickness 8 a t (see FIG. 5) of the first portion 8 a of thelead 8 is larger than the thickness 6 a t (see FIG. 4) of the firstportion 6 a of the lead 6 so that the first portion 8 a is positioned inthe interior of the resin sealing member 11.

As shown in FIG. 3, the width of the lead 6 (the width in the seconddirection (Y direction) perpendicular to the first direction (Xdirection) in the same plane) is larger than the width of the lead 8(the width in the second direction (Y direction) perpendicular to thefirst direction (X direction) in the same plane). Further, the area ofthe first portion 6 a of the lead 6 opposed to the main surface 2 x ofthe semiconductor chip 2 is larger than the area of the first portion 8a of the lead 8 opposed to the main surface 2 x of the semiconductorchip.

The power transistor 1A thus constructed is soldered, together withother components, onto the wiring substrate in the electronic device.The third portions (6 c, 8 c) of the leads 6 and 8, as well as theheader 7, are connected electrically and mechanically to electrodes onthe wiring substrate through an electrically conductive adhesive (e.g.,a lead-free solder material). That is, the power transistor 1A of thisfirst embodiment is of a surface-mounted type structure wherein thethird portion 6 c of the lead 6, the third portion 8 c of the lead 8,and the header 7, which function as external connection terminalssoldered at the time of packaging, are arranged on the back surface 11 yof the resin sealing member 11.

As shown in FIGS. 1 to 5, the power transistor 1A is of a bothupper-/lower-surface heat dissipating structure wherein the firstportion 6 a of the lead 6 is exposed from the main surface 11 x of theresin sealing member 11, and the header 7 is exposed from the backsurface 11 y opposite to the main surface 11 x of the resin sealingmember 11. With such a structure, heat generated from the semiconductorchip 2 is released to the exterior efficiently from the first portion 6a of the lead 6 which has a wide area, and is further released to theexterior from the header 7 of a wide area, so that the heat dissipatingproperty of the power transistor 1A is enhanced.

According to the structure of the power transistor 1A, the secondportion 6 b of the lead 6 is positioned in the interior of the resinsealing member 11. With such a structure, even if the first portion 6 aof the lead 6 is exposed from the main surface (upper surface) of theresin sealing member 11 for the purpose of improving the heatdissipating property of the power transistor, it is possible to preventdislodgment of the lead 6 from the resin sealing member 11, so that thereliability of the power transistor 1A is enhanced.

According to the structure of the power transistor 1A, the first portion6 a of the lead 6 is connected electrically and mechanically to thesource electrode 3 of the semiconductor chip 2 through salientelectrodes 9, while the first portion 8 a of the lead 8 is connectedelectrically and mechanically to the gate electrode 5 of thesemiconductor chip 2 through a salient electrode 9. With such astructure, a conduction path between the leads and the electrodes on thesemiconductor chip becomes shorter and hence the ON resistance of thepower transistor 1A becomes lower in comparison with the structurewherein leads and electrodes on a semiconductor chip are connectedtogether electrically through bonding wires. Besides, the thickness ofthe power transistor 1A can be reduced because the resin thickness ofthe resin sealing member 11 on the main surface of the semiconductorchip 2 becomes smaller.

According to the structure of the power transistor 1A, the semiconductorchip 2 is resin-sealed with the resin sealing member 11, whereby thereliability of the power transistor 1A is enhanced in comparison withthe structure wherein the resin sealing member 2 is not sealed withresin.

Further, according to the structure of the power transistor 1A, thefirst portion 6 a of the lead 6 is exposed from the main surface 11 x ofthe resin sealing member 11 and the first portion 8 a of the lead 8 ispositioned in the interior of the resin sealing member 11. With such astructure, even in the event an electrically conductive foreign mattershould adhere for some reason or other to the main surface 11 x of theresin sealing member 11, it is possible to prevent shorting of the lead6 with the lead 8 caused by that foreign matter and hence possible toenhance the reliability of the power transistor 1A in comparison withthe case where the first portions (6 a, 8 a) of the leads 6 and 8 areexposed from the main surface 11 x of the resin sealing member 11.

FIG. 6 illustrates a schematic construction of a regulator (electronicdevice) with the power transistor 1A of FIG. 1 incorporated therein, inwhich FIG. 6( a) is a plan view and FIG. 6( b) is a sectional view takenalong line a-a in FIG. 6( a), FIG. 7 is a partially enlarged sectionalview of FIG. 6( b), FIG. 8 is an enlarged sectional view taken alongline b-b in FIG. 6( a), and FIG. 9 is an equivalent circuit diagramshowing a schematic construction of the regulator of FIG. 6.

As shown in FIG. 9, a regulator 40A is basically provided with ahigh-side power transistor 1A and a low-side power transistor 1A, inwhich a DC voltage applied to an input terminal is reduced by voltageconversion and a low DC voltage is outputted from an output terminal.For example, a DC voltage of 12V applied to an input terminal is reducedto a DC voltage of 1.3V, which is outputted from an output terminal. Inoperation, a current ID1 flows when the high-side power transistor 1A isON and the low-side power transistor 1A is OFF, while when the high-sidepower transistor 1A is OFF and the low-side power transistor 1A is ON,there flows a current ID2 by virtue of a counter-electromotive force ofcoil. ON-OFF of the high- and low-side power transistors 1A iscontrolled by a control IC. For example, the regulator 40A is used in apower supply section which supplies a server's CPU with a predeterminedvoltage.

As shown in FIG. 6, the regulator 40A comprises a wiring substrate 41,plural power transistors 1A mounted on the wiring substrate 41, and aheat dissipating member 43 disposed on the plural power transistors 1Aso as to cover the power transistors.

The power transistors 1A are mounted on the wiring substrate 41 bysoldering for example. As shown in FIG. 8, the first portion 6 a of thelead 6 is connected electrically and mechanically to an electrode 41 aon the wiring substrate 41 through an electrically conductive adhesive(e.g., a lead-free solder material) 42. The first portion 8 a of thelead 8, though not shown, is connected electrically and mechanically toa corresponding electrode on the wiring substrate 41 through theelectrically conductive adhesive 42. The header 7 is connectedelectrically and mechanically to an electrode 41 b on the wiringsubstrate 41 through the adhesive 42.

Mounting of the power transistor 1A is carried out, for example, byapplying a pasty adhesive onto electrodes formed on the wiring substrateby a screen printing method as an example, thereafter disposing thethird portion 6 c of the lead 6, the third portion 8 c of the lead 8,and the header 7 onto corresponding electrodes on the wiring substrate41 through the adhesive, then conveying the wiring substrate 41 into aninfrared reflow furnace, and thereafter melting and curing the adhesive,although no limitation is made to this method.

In the mounting step of the power transistors 1A, the third portions (6c, 8 c) of the leads 6 and 8 are exposed from the first side face 11 zof the resin sealing member 11, so that there is formed a good fillet 42a having a large thickness of the adhesive 42 in such a manner as tocover side faces of the tips of the third portions (6 c, 8 c). Also asto the header 7, since it is exposed from the second side face 11 z ofthe resin sealing member 11, there is formed a good fillet 42 a having alarge thickness of the adhesive 42 in such a manner as to cover sidefaces of the header 7 exposed from the second side face 11 z of theresin sealing member.

Thus, by allowing the third portions (6 c, 8 c) of the leads 6 and 8 tobe exposed from the first side face 11 z of the resin sealing member 11and allowing the header 7 to be exposed from the second side face 11 zof the resin sealing member, a good fillet 42 is formed on side faces ofthe tips of the third portions (6 c, 8 c) of the leads 6 and 8 and alsoon side faces of the header 7 exposed from the second side face 11 z ofthe resin sealing member 11, so that the connection reliability in themounting step is enhanced. Besides, whether the third portions (6 c, 8c) of the leads 6 and 8, as well as the header 7, are soldered in asatisfactory state or not can be checked visually.

The third portions (6 c, 8 c) of the leads 6 and 8 are projected fromthe first side face 11 z of the resin sealing member 11, and the header7 is projected from the second side face 11 z of the resin sealingmember 11. With such a structure, fillet 42 a is formed on three sidefaces of the third portions (6 c, 8 c) of the leads (6, 8) projectingfrom the first side face 11 z of the resin sealing member 11, and fillet42 a is formed on three side faces of the header 7 projecting from thesecond side face 11 z of the resin sealing member 11. Consequently, theconnection reliability in the mounting step is further enhanced.Moreover, whether the soldering is satisfactory or not can be checkedvisually.

In each power transistor 1A, as shown in FIGS. 7 and 8, the firstportion 6 a of the lead 6 is exposed from the main surface 11 x of theresin sealing member 11 and is connected to the heat dissipating member43 through a heat conducting member 44. With such a structure, heatgenerated from the semiconductor chip 2 is transmitted efficiently fromthe first portion 6 a of the lead 6 to the heat dissipating member 43through the heat conducting member 44, so that it is possible to preventmalfunction of each power transistor 1A caused by heat and hence thereliability of the regulator 40A becomes higher.

FIG. 10 is a plan view showing a part of a lead frame which is used inmanufacturing the power transistor of FIG. 1, FIGS. 11( a) and 11(b) arepartially enlarged views of the lead frame of FIG. 10, in which FIG. 11(a) is a plan view and FIG. 11( b) is a sectional view taken along linea-a in FIG. 11( a), and FIG. 12 is a plan view of a header used inmanufacturing the power transistor of FIG. 1.

As shown in FIGS. 10 and 11, a lead frame 20 has a plurality ofproduct-forming areas 22 partitioned by a frame body 21 and arranged ina matrix shape. In each product-forming area 22 there are arranged twosets of leads 6 and 8 so that two products for example can be formedtherein. The leads 6 and 8 are formed by bending in advance and eachhave a first portion (6 a or 8 a), a second portion (6 b or 8 b), and athird portion (6 c or 8 c). The leads 6 and 8 are formed integrally withthe frame body 21 and the respective third portions (6 c, 8 c) areconnected to the frame body 21.

The lead frame 20 is formed by etching or pressing, for example, ametallic plate formed of copper (Cu) or a copper-based alloy to formpredetermined lead patterns and thereafter bending the leads.

In FIG. 11( a), the numeral 23 denotes an area where the semiconductorchip 2 is to be mounted, and numeral 24 denotes an area where the resinsealing member 11 is to be formed.

As shown in FIG. 12, the header 7 before subjected to the manufacturingprocess is integral with another header 7 through a connection 7 a whichis to be removed in a cutting step. The number of headers 7 thusinterconnected corresponds to the number of products to be obtained ineach product-forming area 22. In this embodiment, two headers 7 areinterconnected as an example. Each header 7 is formed, for example, byetching or pressing a metallic plate of Cu or a Cu-based alloy.

FIG. 13 is a sectional view of a semiconductor chip used inmanufacturing the power transistor of FIG. 1, and FIG. 14 is a bottomview (underside view) of the semiconductor chip of FIG. 13.

As shown in FIGS. 13 and 14, a semiconductor chip 2 has a sourceelectrode 3 and a gate electrode 4 on a main surface 2 x thereof andfurther has a drain electrode 4 on a back surface 2 y thereof oppositeto the main surface 2 x. The drain electrode 4 is formed continuously soas to cover the back side 2 y of the semiconductor chip 2 and peripheraledges of the back side 2 y and extend toward side faces of the chip.That is, the back side 2 y of the semiconductor chip 2 and a part ofside faces of the chip are covered with a conductive film whichconstitutes the drain electrode 4. Such a semiconductor chip 2 can beformed by carrying out dicing in two stages which dicing is for divisionfrom a state of a semiconductor wafer into a state of individualsemiconductor chips. How to fabricate the semiconductor chip 2 will bedescribed below with reference to FIGS. 15 and 16. FIG. 15 is a planview of a semiconductor wafer used in manufacturing the power transistorof FIG. 1, and FIGS. 16( a) to 16(d) illustrate steps for dicing thesemiconductor wafer into individual semiconductor chips in manufacturingthe power transistor of FIG. 1, FIGS. 16( a) to 16(d) being sectionalviews.

First, as shown in FIGS. 15 and 16( a), a plurality of chip-formingareas 31 partitioned by dicing areas 32 are formed in a matrix shape ona main surface of a semiconductor wafer 30. The chip-forming areas 31are each formed by forming transistor, conductive film, and insulatingfilm.

Next, as shown in FIG. 16( b), the semiconductor wafer 30 is affixed toa dicing sheet 34 in a state in which the main surface of thesemiconductor wafer 30 confronts the dicing sheet 34. Thereafter, withuse of a dicing blade of a first width, the dicing areas 32 are cut froma back surface of the semiconductor wafer 32 at such a depth as does notcause separation of the chip-forming areas 31, to form grooves 33.

Next, as shown in FIG. 16( c), a conductive film 4 a such as, forexample, Ti/Ni/Au film or Ti/Ni/Ag film is formed throughout the entireback surface of the semiconductor wafer 30 including the interiors ofthe grooves 33, thereafter, as shown in FIG. 16( d), the semiconductorwafer 30 is affixed to the dicing sheet 34 in a state in which the mainsurface of the semiconductor wafer confronts the dicing sheet 34, thenwith use of a dicing blade of a second width smaller than the firstwidth, bottoms of the grooves 33 are cut for separation into individualchip-forming areas 31. In this way, as shown in FIG. 16( d), there areformed semiconductor chips 2 each having a drain electrode 4 which isformed continuously so as to cover not only the back surface 2 y of eachsemiconductor chip 2 but also a part of side faces of the chip.

Next, how to manufacture the power transistor of FIG. 1 will bedescribed below with reference to FIGS. 17 to 24.

FIGS. 17( a) and 17(b) illustrate a manufacturing step in manufacturingthe power transistor, in which FIG. 17( a) is a plan view and FIG. 17(b) is a sectional view taken along line a-a in FIG. 17( a), FIGS. 18( a)and 18(b) illustrates a manufacturing step in manufacturing the powertransistor, in which FIG. 18( a) is a plan view and FIG. 18( b) is asectional view taken along line a-a in FIG. 18( a), FIG. 19 is apartially enlarged sectional view of FIG. 18( b), FIG. 20 is a plan viewillustrating a manufacturing step in manufacturing the power transistor,FIGS. 21( a) and 21(b) illustrate a manufacturing step in manufacturingthe power transistor, in which FIG. 21( a) is a sectional view at aposition corresponding to line a-a in FIG. 20 and FIG. 21( b) is asectional view at a position corresponding to line b-b in FIG. 20, FIGS.22( a) and 22(b) illustrate a manufacturing step in manufacturing thepower transistor, in which FIG. 22( a) is a sectional view at a positioncorresponding to line a-a in FIG. 20 and FIG. 22(b) is a sectional viewat a position corresponding to line b-b in FIG. 20, FIG. 23 is a planview illustrating a manufacturing step in manufacturing the powertransistor, and FIGS. 24( a) and 24(b) illustrate a manufacturing stepin manufacturing the power transistor, in which FIG. 24( a) is a planview and FIG. 24( b) is a sectional view taken along line a-a in FIG.24( a).

First, the semiconductor chip 2 shown in FIGS. 13 and 14, the lead frame20 shown in FIGS. 10 and 11, and the header 7 shown in FIG. 12, areprovided. Though not shown, salient electrodes 9 are formed on thesource electrode 3 and gate electrode 5 of the semiconductor chip 2. Itis preferable that the formation of the salient electrodes 9 be donebefore dividing the semiconductor wafer into individual semiconductorchips 2, namely, in the stage of semiconductor wafer.

Next, the upper and lower surfaces of the lead frame 20 are inverted sothat in the thickness direction of the frame body 21 there is made achange from such a state as shown in FIG. 11 wherein the first portion 6a of the lead 6 lies in an upper position than the third portion 6 c tosuch a state as shown in FIG. 17 wherein the first portion 6 a of thelead 6 lies in a lower position than the third portion 6 c. Thereafter,as shown in FIG. 17, the semiconductor chip 2 is mounted on the firstportions (6 a, 8 a) of the leads 6 and 8. The mounting of thesemiconductor chip 2 is carried out by positioning the main surface 2 xof the semiconductor chip 2 so as to confront the firs portions (6 a, 8a) of the leads 6 and 8 and by subsequent thermo-compression bonding.Further, the mounting of the semiconductor chip 2 is carried out in sucha manner that the back surface 2 y of the semiconductor chip 2 and thethird portions (6 c, 8 c) of the leads 6 and 8 are positioned on thesame side.

Next, a pasty conductive adhesive (e.g., a lead-free solder paste) isapplied onto the drain electrode 4 formed on the back surface 2 y of thesemiconductor chip 2, then the header 7 is positioned on the drainelectrode 4 through the adhesive, and subsequently the adhesive 10 ismelted and cured to connect the header 7 to the drain electrode 4electrically and mechanically.

In this step, the drain electrode 4 is formed continuously so as tocover the back surface 2 y of the semiconductor chip 2 and also a partof side faces of the chip, so that a fillet 10 a of the adhesive 10 isformed to cover a part of side faces of the semiconductor chip 2. As aresult, the strength of connection between the semiconductor chip 2 andthe header 7 is improved and the reliability against heat is enhanced.

Next, the upper and lower surfaces of the lead frame 20 are invertedfrom the state of FIG. 18 to the state of FIG. 11. Thereafter, as shownin FIG. 21, the lead frame 20 is positioned between an upper half 25 aand a lower half 25 b of a molding die 25. The positioning of the leadframe 20 is performed in the presence of an insulating sheet 27 betweenthe lead frame 20, as well as the header 7, and the lower half 25 b. Thepositioning of the lead frame 20 is performed in a state in which thesemiconductor chip 2, the leads (6, 8) and the header 7 are positionedin the interior of a cavity 26 formed in the molding die 25. Further,the positioning of the lead frame 20 is performed in a state in whichthe first portion 6 a of the lead 6 is in contact with an inner surfaceof the cavity 26 which confronts the first lead. In this step, the firstportion 8 a of the lead 8 is smaller in thickness than the first portion6 a of the lead 6, and an upper surface of the first portion 8 a of thelead 8 is positioned closer to the main surface 2 x of the semiconductorchip 2 than an upper surface of the first portion 6 a of the lead 6, sothat a gap is formed between the first portion 8 a of the lead 8 and theinner surface of the cavity 26.

Next, a thermosetting resin is injected under pressure from a pot of themolding die 25 into the cavity 26 through a runner and a resin pouringgate to form a resin sealing member 11 as shown in FIG. 22. In this stepthe semiconductor chip 2 is sealed with the resin sealing member 11. Thefirst portion 6 a of the lead 6 is exposed from a main surface 11 x ofthe resin sealing member 11, as shown in FIG. 23. The third portions (6c, 8 c) of the leads 6 and 8, as well as the header 7, are exposed fromthe back surface 11 y of the resin sealing member 11. Further, as shownin FIG. 23, the third portions (6 c, 8 c) of the leads 6 and 8 projectfrom a first side face 11 z of the resin sealing member 11, while theheader 7 projects from a second side face 11 z of the resin sealingmember.

Next, as shown in FIG. 24, the connection 7 a between two headers 7 iscut off and the third portions (6 c, 8 c) of the leads 6 and 8 are cutoff from the lead frame body 21, whereby the power transistor of thisfirst embodiment is nearly completed. The cutting of the leads 6 and 8is performed in a projected state of the third portions (6 c, 8 c) ofthe leads 6 and 8 from the first side face 11 z of the resin sealingmember 11.

As set forth above, the following effects are obtained by this firstembodiment.

It is possible to provide a novel power transistor 1A which exhibits ahigh heat dissipating property and high connection reliability duringmounting.

It is possible to provide a novel power transistor 1A which is high inheat dissipating property and permits visual inspection of whethersoldering is good or bad at the time of mounting.

It is possible to provide a novel power transistor high in both heatdissipating property and reliability.

It is possible to provide a novel power transistor 1A high in heatdissipating property and suitable for the reduction of thickness.

It is possible to provide a novel power transistor 1A high in heatdissipating property and suitable for the reduction of size.

It is possible to provide a novel regulator 40A having a highreliability against heat.

First Modification of the First Embodiment

FIG. 25 is a sectional view of a principal portion, showing a schematicconstruction of a regulator according to a first modification of thefirst embodiment.

In a regulator 40A of this first modification, as shown in FIG. 25, forexample a solder material 44 a is used as a heat conducting member, andthe first portion 6 a of the lead exposed from the main surface 11 x ofthe resin sealing member 11 in the power transistor 1A is fixed to theheat dissipating member 43 through the solder material 44 a.

At the time of thus connecting the first portion 6 a of the lead 6 tothe heat dissipating member 43 through the solder material 44 a, it isnot necessary to use a mask because the first portion 8 a of the lead 8is positioned in the interior of the resin sealing member 11.Consequently, it is possible to reduce the manufacturing cost of theregulator 40B.

Second Modification of the First Embodiment

FIGS. 26( a) and 26(b) show an internal structure of a power transistoraccording to a second modification of the first embodiment, in whichFIG. 26( a) is a plan view and FIG. 26( b) is a sectional view takenalong line a-a in FIG. 26( a).

In a power transistor 1B of this second modification, as shown in FIG.26, slits 13 are formed through the first portion 6 a of the lead 6 soas to extend from an upper surface of the first portion 6 a to anopposite lower surface thereof. The slits 13 are formed in the otherportion than the area where salient electrodes 9 are formed. In thissecond modification, a plurality of stripe-like slits 13 extend in Xdirection.

With such a concentration, it is possible to suppress a stress on bumpswhich stress is caused by a difference in thermal expansion coefficientbetween the semiconductor chip 2 and the lead 6, so that it is possibleto enhance the reliability of the power transistor 1B. Particularly,since the first portion 6 a of the lead 6 is formed at as wide an areaas possible for the purpose of improving the heat dissipating property,it is important that the slits 13 be formed for relaxing the stressconcentrated on the salient electrodes 9.

However, since the formation of the slits 13 leads to deterioration ofthe heat dissipating property, it is necessary that the number and sizeof the slits 13 be determined taking the stress concentrated on thesalient electrodes 9 and heat dissipating property into account.

Further, at the time of forming the resin sealing member 11, resin isapt to get in between the main surface of the semiconductor chip 2 andthe first portion 6 a of the lead 6, so it is possible to suppress theformation of voids.

Although the slits 13 formed in this second modification extends in Xdirection, the extending direction of the slits 13 is not limitedthereto, but slits extending for example in Y direction, or slitsextending obliquely relative to X and Y directions, will also do. Whatis important is to form the slits 13 so as to be each positioned betweenadjacent salient electrodes 7. It is preferable that the number of slits13 be determined according to the number of salient electrodes 9. As thecase may be, only one slit may be formed.

Third Modification of the First Embodiment

FIGS. 27( a) and 27(b) illustrate an internal structure of a powertransistor according to a third modification of the first embodiment, inwhich FIG. 27( a) is a plan view and FIG. 27( b) is a sectional viewtaken along line a-a in FIG. 27( a).

In a power transistor 1C of this third modification, grooves 14 areformed in the first portion 6 a of the lead 6. The grooves 14 arerecessed from the lower surface (the surface which confronts the chip)of the first portion 6 a of the lead 6 toward the opposite upper surfacethereof and are formed in the other portion than the area where bumps 9are formed. In this third modification there are formed a plurality ofstripe-like grooves 14 extending in X direction.

According to such a construction, it is possible to suppress a stressconcentration on the salient electrodes 9 without causing a greatdeterioration of heat dissipating property. Besides, as in the previoussecond modification, it is possible to suppress the formation of voids.

Although the grooves 14 formed in this third modification extend in Xdirection, the extending direction of the grooves 14 is not limitedthereto. For example, grooves extending in Y direction, or groovesextending obliquely relative to both X and Y directions, will also do.What is important is to form the grooves 14 so as to be positionedbetween adjacent salient electrodes 9. As to the number of grooves 14,it is preferably determined according to the number of salientelectrodes 9. As the case may be, it may be unity.

Fourth Modification of the First Embodiment

FIGS. 28( a) and 28(b) illustrate an internal structure of a powertransistor according to a fourth modification of the first embodiment,in which FIG. 28( a) is a plan view and FIG. 28( b) is a sectional viewtaken along line a-a in FIG. 28( a).

A power transistor 1D of this fourth embodiment uses an electricallyconductive adhesive 15 (e.g., a solder material) as connecting means forconnection between the source electrode 3 of the semiconductor chip 2and the first portion 6 a of the lead 6. According to this construction,the amount of resin of the resin sealing member 11 interposed betweenthe source electrode 3 of the semiconductor chip 2 and the first portion6 a of the lead 6 becomes smaller, so that the heat dissipating propertycan be further enhanced.

Fifth Modification of the First Embodiment

FIGS. 29( a) and 29(b) illustrates an internal structure of a powertransistor according to a fifth modification of the first embodiment, inwhich FIG. 29( a) is a plan view and FIG. 29( b) is a sectional viewtaken along line a-a in FIG. 29( a).

In a power transistor 1E of this fifth embodiment, a lead 16 ispositioned outside the semiconductor chip 2 and an electric connectionbetween the gate electrode 5 of the semiconductor chip 2 and the lead 16is effected through a bonding wire 17.

The lead 16 is positioned on the back surface 11 y side relative to themain surface 11 x of the resin sealing member 11 and its surface side towhich the wire is connected is covered with the resin of the resinsealing member 11. Like the third portion 6 c of the lead 6, the lead 16is exposed from both back surface 11 y and first side face 11 z of theresin sealing member 11.

Also in this fifth modification there are obtained the same effects asin the first embodiment.

Sixth Modification of the First Embodiment

FIG. 30 is a plan view illustrating an internal structure of a powertransistor according to a sixth modification of the first embodiment.

In a power transistor 1F of this sixth modification, slits 18 extendingfrom the tip of the third portion 6 c of the lead 6 toward the firstportion 6 a of the lead are formed in the lead 6. In this sixthmodification, two such slits 18 are provided, extending from the tip ofthe third portion 6 c up to the first portion 6 a.

According to this construction, even if the width of the lead 6 isincreased for attaining a low ON resistance and improving the heatdissipating property, it is possible to make the bending work for thelead 6 less difficult, so that it is possible to increase theproductivity in the lead bending work.

Seventh Modification of the First Embodiment

FIG. 31 is a sectional view illustrating an internal structure of apower transistor according to a seventh modification of the firstembodiment.

In a power transistor 1G of this seventh modification, as shown in FIG.31, grooves 19 are formed in the first portion 6 a of the lead 6. Thegrooves 19 are recessed from the lower surface (the surface whichconfronts the chip) of the first portion 6 a of the lead 6 toward theopposite upper surface and are formed in the area to which the salientelectrodes 9 are connected.

Also in this seventh modification there are obtained the same effects asin the third modification. Besides, since the height of each salientelectrode 9 can be offset by each groove 19, it is possible to thin thepower transistor 1G.

Second Embodiment

FIGS. 32( a) and 32(b) illustrate appearance of a power transistoraccording to a second embodiment of the present invention, in which FIG.32( a) is a plan view (top view) and FIG. 32( b) is a bottom view(underside view), and FIG. 33 is a sectional view taken along line a-ain FIG. 32( a).

In a power transistor 1H of this second embodiment, as shown in FIGS. 32and 33, a main surface 11 x of a resin sealing member 11 and a backsurface 11 y thereof are approximately the same in size and shape andside faces 11 z of the resin sealing member 11 are approximatelyperpendicular to the main surface 11 x and back surface 11 y. Such apower transistor 1H can be formed by sealing all of plural semiconductorchips 2 with one resin sealing member and by subsequently dicing theresin sealing member, lead frame and header into individualsemiconductor chips 2. Also in this case, as shown in FIGS. 32 and 33,the first portion 6 a of the lead 6 is exposed from the main surface(upper surface) 11 x of the resin sealing member 11, the third portions(6 c, 8 c) of the leads 6 and 8 are exposed from the back surface (lowersurface, mounting surface) 11 y and first side face 11 z of the resinsealing member 11, and the header 7 is exposed from the back surface 11y and second side face 11 z of the resin sealing member 11.

Also in such a power transistor 1H constructed as above of this secondembodiment, the present invention is applicable and there are obtainedthe same effects as in the first embodiment.

Third Embodiment

FIG. 34 is a plan view (top view) showing an appearance of a powertransistor according to a third embodiment of the present invention,FIG. 35 is a bottom view (underside view) showing an appearance of thepower transistor of the third embodiment, FIG. 36 is an enlargedsectional view taken along line a-a in FIG. 34, and FIG. 37 is anenlarged sectional view taken along line b-b in FIG. 34.

In a power transistor 1J of this third embodiment, as shown in FIGS. 34to 37, upper and lower surfaces of the semiconductor chip 2 areinverted. More specifically, the main surface 2 x of the semiconductorchip 2 is positioned on the back surface 11 y side of the resin sealingmember 11, while the back surface 2 y of the semiconductor chip ispositioned on the main surface 11 x side of the resin sealing member.

Like the lead 6 used in the first embodiment, a lead 51 is formed bybending and is provided with a first portion 51 a, a second portion 51b, and a third portion 51 c.

The first portion 51 a of the lead 51 is connected electrically andmechanically to the drain electrode 4 on the back surface 2 y of thesemiconductor chip 2 through adhesive 10 and is exposed from the mainsurface 11 x of the resin sealing member 11. The third portion 51 c ofthe lead 51 is exposed from the back surface 11 y and first side face 11z of the resin sealing member 11.

A lead 52 is connected to the source electrode 3 on the main surface 2 xof the semiconductor chip 2 through salient electrode 9 and is exposedfrom the back surface 11 y and second side face 11 z of the resinsealing member 11.

A lead 53 is connected to the gate electrode 5 on the main surface 2 xof the semiconductor chip 2 through salient electrode 9 and is exposedfrom the back surface 11 y and second side face of the resin sealingmember 11.

Also by the power transistor 1J of this third embodiment there areobtained the same effects as in the first embodiment.

Moreover, the surface side formed with source and gate regions assubstantially active regions faces down and the whole surface of thechip is covered with the lead 51. This structure is strong against anexternal electromagnetic noises.

Fourth Embodiment

FIG. 38 is a plan view (top view) showing an appearance of a powertransistor according to a fourth embodiment of the present invention,FIG. 39 is a bottom view (underside view) of the power transistor of thefourth embodiment, FIG. 40 is a plan view showing an internal structureof the power transistor of the fourth embodiment, FIG. 41 is an enlargedsectional view taken along line a-a in FIG. 40, and FIG. 42 is anenlarged sectional view taken along line b-b in FIG. 40.

As shown in FIGS. 38 to 42, a power transistor 1K of this fourthembodiment is basically of the same construction as the first embodimentand is different in the following points from the first embodiment.

A header 62 has a first portion 62 a to which the semiconductor chip 2is adhesively fixed and a second portion 62 b formed integrally with thefirst portion 62 a and having a thickness greater than the first portion62 a.

The first portion 62 a of the header 62 is exposed from the back surface11 y of the resin sealing member 11, while the second portion 62 b ofthe header 62 is exposed from the main surface 11 x of the resin sealingmember. Moreover, the second portion 62 b of the header 62 is exposedfrom the second side face 11 z of the resin sealing member 11 and isfurther exposed from both third and fourth side faces 11 z of the resinsealing member 11 which side faces are positioned on mutually oppositesides in Y direction.

A first portion 61 a of a lead 61 projects from the first side face 11 zof the resin sealing member 11, while a second portion 61 b and a thirdportion 61 c of the lead 61 are positioned outside the first side face11 z of the resin sealing member 11.

A first portion 63 a of the lead 63 projects from the first side face 11z of the resin sealing member 11, while a second portion 63 b and athird portion 63 c of the lead 63 are positioned outside the first sideface 11 z of the resin sealing member 11.

Also by the power transistor 1K of this fourth embodiment there areobtained the same effects as in the first embodiment.

Further, since the first portion 62 a of the header 62 in this fourthembodiment is exposed from three side faces (second to fourth sidefaces) of the resin sealing member 11 exclusive of the first side face11 z of the resin sealing member, so that the heat dissipating propertycan be further enhanced.

Fifth Embodiment

FIG. 43 is a plan view showing an internal structure of a powertransistor according to a fifth embodiment of the present invention, andFIGS. 44( a) and 44(b) illustrate an internal structure of the powertransistor of the fifth embodiment, in which FIG. 44( a) is a sectionalview taken along line a-a in FIG. 43 and FIG. 44( b) is a sectional viewtaken along line b-b in FIG. 43.

A power transistor 1L of this fifth embodiment is basically of the sameconstruction as the fourth embodiment and is different in the followingpoints from the fourth embodiment.

As shown in FIGS. 43 and 44, the first portion 61 a and second portion61 b of the lead 61 are positioned in the interior of the resin sealingmember 11, while the third portion 61 c of the lead 61 is exposed fromboth back surface 11 y and first side face 11 z of the resin sealingmember 11. Likewise, the first portion 63 a and second portion 63 b ofthe lead 63 are positioned in the interior of the resin sealing member11, while the third portion 63 c of the lead 63 is exposed from bothback surface 11 y and first side face 11 z of the resin sealing member11.

Also by the power transistor 1L of this fifth embodiment there areobtained the same effects as in the first embodiment.

Sixth Embodiment

FIG. 45 is a plan view showing an appearance of a power transistoraccording to a sixth embodiment of the present invention, FIG. 46 is abottom view showing an appearance of the power transistor of the sixthembodiment, and FIGS. 47( a) and 47(b) illustrate an internal structureof the power transistor of the sixth embodiment, in which FIG. 47( a) isa sectional view taken along line a-a n FIG. 45 and FIG. 47( b) is asectional view taken along line b-b in FIG. 45.

A power transistor 1M of this sixth embodiment is different from thepower transistor of the previous fifth embodiment in that the upper andlower surfaces of the semiconductor chip 2 are inverted. That is, themain surface 2 x of the semiconductor chip 2 is positioned on the backsurface 11 y side of the resin sealing member 11, while the back surface2 y of the semiconductor chip is positioned on the main surface 11 xside of the resin sealing member.

The first portion 62 a of the header 62 is exposed from the main surface11 x of the resin sealing member 11, while the second portion 62 b ofthe header is exposed from the back surface 11 y of the resin sealingmember.

A lead 65 has a first portion 65 a and a second portion 65 b formedintegrally with and thicker than the first portion 65 a. The firstportion 65 a of the lead 65 is connected electrically and mechanicallyto the source electrode 3 on the main surface 2 x of the semiconductorchip 2 through salient electrodes 9 and is positioned in the interior ofthe resin sealing member 11. The second portion 65 b of the lead 65 isexposed from both back surface 11 y and first side face 11 z of theresin sealing member 11.

A lead 66 has a first portion 66 a and a second portion 66 b formedintegrally with and thicker than the first portion 66 a. The firstportion 66 a of the lead 66 is connected electrically and mechanicallyto the gate electrode 5 on the main surface 2 x of the semiconductorchip 2 through a salient electrode 9 and is positioned in the interiorof the resin sealing member 11. The second portion 66 b of the lead 66is exposed from both back surface 11 y and first side face 11 z of theresin sealing member 11.

Thus, also by the power transistor 1M of this sixth embodiment there areobtained the same effects as in the first embodiment.

Although the present invention has been described concretely by way ofthe above embodiments, it goes without saying that the invention is notlimited to the above embodiments, but that various changes may be madewithin the scope not departing from the gist of the invention.

The following is a brief description of effects obtained by typicalmodes of the invention as disclosed herein.

It is possible to provide a novel semiconductor device high in both heatdissipating property and connection reliability in mounting.

It is possible to provide a novel semiconductor device high in heatdissipating property and permitting visual inspection of whethersoldering is good or bad in mounting.

It is possible to provide a novel semiconductor device high in both heatdissipating property and reliability.

It is possible to provide a novel semiconductor device high in heatdissipating property.

It is possible to provide an electronic device high in reliability.

1. A semiconductor device comprising: (a) a semiconductor chip having amain surface and a back surface opposite to the main surface, thesemiconductor chip having a first electrode and a second electrode onthe main surface thereof and a third electrode on the back surfacethereof; (b) a first metal conductor having a first obverse surface anda first reverse surface opposite to the first obverse surface, the firstmetal conductor comprising a first portion, a second portion, and athird portion, the first portion being positioned over the firstelectrode of the semiconductor chip, the third portion being positionedunder the first portion, the second portion being positioned between thefirst portion and the third portion, and the first electrode of thesemiconductor chip is electrically connected to the first reversesurface of the first portion by using a conductive adhesive; (c) asecond metal conductor having a second obverse surface and a secondreverse surface opposite to the second obverse surface, the second metalconductor being positioned under the first portion of the first metalconductor, and the second electrode of the semiconductor chip iselectrically connected to the second obverse surface by using a metalwire; (d) a third metal conductor having a third obverse surface and athird reverse surface opposite to the third obverse surface, thesemiconductor chip being mounted over the third obverse surface of thethird metal conductor, and the third electrode of the semiconductor chipis electrically connected to the third obverse surface; (e) a sealingbody having a top surface and a bottom surface opposite to the topsurface, the sealing body having a first side surface and a second sidesurface opposite to the first side surface, the first and second sidesurfaces intersecting the top and bottom surfaces, and the sealing bodysealing the semiconductor chip, the wire, a part of the first metalconductor, a part of the second metal conductor, and a part of the thirdmetal conductor; wherein the first obverse surface of the first portionof the first metal conductor is exposed from the top surface of thesealing body, and wherein the first reverse surface of the third portionof the first metal conductor, the second reverse surface of the secondmetal conductor, and the third reverse surface of the third metalconductor are exposed from the bottom surface of the sealing body.
 2. Asemiconductor device according to claim 1, wherein the first reversesurface of the third portion of the first metal conductor, the secondreverse surface of the second metal conductor, and the third reversesurface of the third metal conductor are in a same plane.
 3. Asemiconductor device according to claim 1, wherein the second portion ofthe first metal conductor is sealed with the sealing body.
 4. Asemiconductor device according to claim 1, wherein parts of the thirdportion of the first metal conductor and the second metal conductor areexposed from the first side surface of the sealing body, and wherein apart of the third metal conductor is exposed from the second sidesurface of the sealing body.
 5. A semiconductor device according toclaim 4, wherein a plurality of the slits formed to open toward thefirst side surface of the sealing body are formed in the third reversesurface of the third portion of the first metal conductor.
 6. Asemiconductor device according to claim 1, wherein the first obversesurface of the first portion of the first metal conductor is anadaptable surface for connecting to a heat dissipating member.
 7. Asemiconductor device according to claim 1, wherein the second electrodeis disposed on the main surface of the semiconductor chip between thefirst metal conductor and the second metal conductor in plan view.
 8. Asemiconductor device according to claim 1, wherein a dent is formed inanother portion than the area where the semiconductor chip is mounted inthe third obverse surface of the third metal conductor.
 9. Asemiconductor device according to claim 8, wherein an interior of thedent is filled with a part of the resin sealing body.
 10. Asemiconductor device according to claim 1, wherein the first reversesurface of the first portion of the first metal conductor is notopposite to the third obverse surface of the third portion of the firstmetal conductor.
 11. A semiconductor device according to claim 1,wherein the conductive adhesive is solder.
 12. A semiconductor deviceaccording to claim 1, wherein the metal wire is bonding wire.
 13. Asemiconductor device according to claim 1, wherein the first, second,and third metal conductors are copper or copper based alloy.
 14. Asemiconductor device according to claim 1, wherein a Ti/Ni/Au film isformed on the back surface of the semiconductor chip.
 15. Asemiconductor device according to claim 1, wherein the back surface ofthe semiconductor chip is electrically connected to the third obversesurface of the third metal conductor with a solder.
 16. A semiconductordevice according to claim 1, wherein an area of the first electrode ofthe semiconductor chip is broader than an area of the second electrodeof the semiconductor chip.
 17. A semiconductor device according to claim1, wherein the semiconductor chip includes a MOSFET, wherein the firstelectrode of the semiconductor chip is a source electrode of the MOSFET,wherein the second electrode of the semiconductor chip is a gateelectrode of the MOSFET, and wherein the third electrode of thesemiconductor chip is a drain electrode of the MOSFET.
 18. Asemiconductor device comprising: (a) a semiconductor chip having a mainsurface and a back surface opposite to the main surface, thesemiconductor chip including a MOSFET, and the semiconductor chip havinga source electrode and a gate electrode of the MOSFET on the mainsurface thereof and a drain electrode of the MOSFET on the back surfacethereof; (b) a first metal conductor having a first obverse surface anda first reverse surface opposite to the first obverse surface, the firstmetal conductor comprising a first portion, a second portion, and athird portion, the first portion being positioned over the sourceelectrode of the semiconductor chip, the third portion being positionedunder the first portion, the second portion being positioned between thefirst portion and the third portion, and the source electrode of thesemiconductor chip is electrically connected to the first reversesurface of the first portion by using a conductive adhesive; (c) asecond metal conductor having a second obverse surface and a secondreverse surface opposite to the second obverse surface, the second metalconductor being positioned under the first portion of the first metalconductor, and the gate electrode of the semiconductor chip iselectrically connected to the second obverse surface by using a metalwire; (d) a third metal conductor having a third obverse surface and athird reverse surface opposite to the third obverse surface, thesemiconductor chip being mounted over the third obverse surface of thethird metal conductor, and the drain electrode of the semiconductor chipis electrically connected to the third obverse surface; (e) a sealingbody having a top surface and a bottom surface opposite to the topsurface, the sealing body having a first side surface and a second sidesurface opposite to the first side surface, the first and second sidesurfaces intersecting the top and bottom surfaces, and the sealing bodysealing the semiconductor chip, the wire, a part of the first metalconductor, a part of the second metal conductor, and a part of the thirdmetal conductor; wherein the first obverse surface of the first portionof the first metal conductor is exposed from the top surface of thesealing body, and wherein the first reverse surface of the third portionof the first metal conductor, the second reverse surface of the secondmetal conductor, and the third reverse surface of the third metalconductor are exposed from the bottom surface of the sealing body.